Single-layer antiferromagnetic semiconductor CoS2 with pentagonal structure
نویسندگان
چکیده
منابع مشابه
Anisotropic magnetoresistance in an antiferromagnetic semiconductor.
Recent studies in devices comprising metal antiferromagnets have demonstrated the feasibility of a novel spintronic concept in which spin-dependent phenomena are governed by an antiferromagnet instead of a ferromagnet. Here we report experimental observation of the anisotropic magnetoresistance in an antiferromagnetic semiconductor Sr2IrO4. Based on ab initio calculations, we associate the orig...
متن کاملTiling the Hyperbolic Plane with a Single Pentagonal Tile
In this paper, we study the number of tilings of the hyperbolic plane that can be constructed, starting from a single pentagonal tile, the only permitted transformations on the basic tile being the replication by displacement along the lines of the pentagrid. We obtain that there is no such tiling with five colours, that there are exactly two of them with four colours and a single trivial tilin...
متن کاملJosephson effect in hybrid oxide heterostructures with an antiferromagnetic layer.
Josephson coupling between an s- and d-wave superconductor through a 50 nm thick Ca1-xSrxCuO2 antiferromagnetic layer was observed for the hybrid Nb/Au/Ca1-xSrxCuO2/YBa2Cu3O7-delta heterostructures and investigated as a function of temperature, magnetic field, and applied millimeter-wave electromagnetic radiation. The magnetic field dependence of the supercurrent I(c)(H) exhibits anomalously ra...
متن کاملIssues on nanoimprint lithography with a single-layer resist structure
We summarize our key developments in nanoimprint lithography (NIL) that employs a single layer resist lift-off process: lowering of the imprint temperature (for thermal imprint) and pressure, achieving uniform resist thickness and low residual resist layer thickness in the trenches, and eliminating metal ‘rabbit ears’ for the single-layer lift-off. In thermal NIL, our requirements for lower ope...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Physical Review B
سال: 2018
ISSN: 2469-9950,2469-9969
DOI: 10.1103/physrevb.98.205425